GN2470_08 Datasheet, PDF (1/5 Pages) Supertex, Inc – Insulated Gate Bipolar Transistor

Insulated Gate
Bipolar Transistor
GN2470
IGBT
Features
► Low voltage drop at high currents
► Industry standard TO-252 (D-Pak) package
► 700V breakdown voltage rating
Applications
► White goods
► Small appliances
► Lighting controls
► Motor drives
► Meter readers
► Small off-line power supplies
General Description
The Supertex GN2470 is a 700V, 3.5amp insulated gate
bipolar transistor (IGBT) that combines the positive aspects
of both BJTs and MOSFETs.
The GN2470 IGBT has lower on-state voltage drop with high
blocking voltage capabilities and features many desirable
properties including a MOS input gate, low conduction voltage
drop at high currents.
Ordering Information
Device
Package Option
TO-252 (D-PAK)
GN2470
GN2470K4-G
-G indicates that the package is RoHS certified (“Green”)
Pin Configuration
COLLECTOR
EMITTER
GATE
TO-252 (D-PAK) (K4)
Absolute Maximum Ratings
Parameter
Value
Collector-to-emitter voltage
700V
Gate-to-emitter voltage
±20V
Operating junction and storage
temperature range
-55^OC to +150^OC
Soldering temperature*
300^OC
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
YYWW
GN2470
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
TO-252 (D-PAK) (K4)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: [phone] ● www.supertex.com