GN2470 Datasheet, PDF (2/8 Pages) Supertex, Inc – INSULATED GATE BIPOLAR TRANSISTOR

GN2470
IGBT
Ordering Information
Device
Package Options
D-Pak*
GN2470
GN2470K4
* Only available in 2000 piece Tape & Reel
Absolute Maximum Ratings
Collector-to-EmItter Voltage
Gate-to-Emitter Voltage
Operating Junction and Storage
Temperature Range TJ and TSTG
Soldering Temperature*
700V
+/-20V
-55°C to +150°C
300°C
*Distance if 1.6mm from case for 10 seconds.
*Distance of 1.6mm from case for 10 seconds.
Thermal Characteristics
Package
Ic (continuous)
Ic (pulsed)
D-Pak
1.0A
3.5A
*When mounted on FR4 board, 25mm x 25mm x 1.57mm
Package Option
D-Pak
C
G
E
Power
Dissipation @
T_A = 25°C
2.5W
θja
°C/W
60*
θjc
°C/W
10
Electrical Characteristics (at T_A=25°C, unless otherwise specified)
Symbol
BV_CES
BV_ECS
V_GE(th)
V_CE
g_fe
I_CES
I_GES
I_C(on)
t_d(on)
t_r
t_d(off)
t_f
C_ies
C_oes
C_res
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Gate Threshold voltage
Collector-Emitter Voltage Drop
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
On-State Collector Current
Turn-on delay time
Rise time
Turn-off delay time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min Typ Max Units
700
-
-
V
-6
-10
V
1.5
-
3.5
V
-
4.5 5.0
V
0.5
0.8
-
mho
-
-
100 uA
-
-
±100 nA
3.0
4.0
-
A
-
8.0 15.0 ns
-
400 600
ns
-
20
50
ns
-
7000 12000 ns
-
100 150
pF
-
12
25
pF
-
2
5
pF
2
Conditions
V_GE = 0V, I_C = 250uA
V_GE = 0V, I_C = 1mA
V_CE = V_GE, I_C = 1mA
I_C = 3A, V_GE = 13V
V_CE = 25V, I_C = 2A
V_GE = 0V, V_CE =600V
V_GE = +/-20V, V_CE =0V
V_GE = 10V, V_CE = 25V
V_CC = 25V
R_GEN = 25Ω
R_L = 11Ω
V_CE = 25V
V_GE = 0V
f = 1MHz
Rev.B – 4-22-04