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VP5225 Datasheet, PDF (1/3 Pages) Supertex, Inc – P-Channel Enhancement-Mode Vertical DMOS FET
P-Channel Enhancement-Mode
Vertical DMOS FET
VP5225
Features
General Description
► Low threshold (-2.4V max.)
This low threshold, enhancement-mode (normally-off)
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
e Applications
► Medical Ultrasound imaging
t ► Non-destructive evaluation
► Solid state relays
► Telecom switches
e ► Logic level interfaces – ideal for TTL and CMOS
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
l Ordering Information
Device
Package Option
3-Lead TO-252 (D-PAK)
o VP5225
VP5225K4
BVDSS/BVDGS
(V)
-250
RDS(ON)
(max)
(Ω)
3.0
ID(ON)
(min)
(A)
-2.5
Absolute Maximum Ratings
s Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
b Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to
O the device may occur. Functional operation under these conditions is
Pin Configuration
DRAIN
SOURCE
GATE
3-Lead TO-252 (D-PAK) (K4)
Product Marking
not implied. Continuous operation of the device at the absolute rating
YYWW
YY = Year Sealed
level may affect device reliability. All voltages are referenced to device
VP5225
WW = Week Sealed
ground.
LLLLLLL
L = Lot Number
* Distance of 1.6mm from case for 10 seconds.
3-Lead TO-252 (D-PAK) (K4)