BTB06 Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTA/BTB06 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P (W)
8
7
6
5
4
3
2
1
IT(RMS)(A)
0
0
1
2
3
4
5
6
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Zth(j-c)
Fig. 2: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
7
6
5
4
3
2
1
0
0
25
BTB
BTA
Tc(°C)
50
75
100
125
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max.
Vto = 0.85 V
Rd = 60 mΩ
Tj=Tj max
1E-1
10
Zth(j-a)
1E-2
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A)
70
60
50
40
30
Repetitive
20
Tc=105°C
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
ITSM (A), I²t (A²s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
1000
10
0.01
tp (ms)
0.10
1.00
I²t
10.00
3