BTB06 Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTA/BTB06 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions Quadrant
BTA/BTB06
TW
I_GT (1)
V_GT
V_D = 12 V
I - II - III
R_L = 30 Ω
I - II - III
MAX.
MAX.
5
V_GD
V_D = V_DRM R_L = 3.3 kΩ I - II - III
Tj = 125°C
MIN.
I_H (2)
I_T = 100 mA
MAX.
10
I_L
I_G = 1.2 I_GT
I - III
MAX.
10
II
15
dV/dt (2) V_D = 67 %V_DRM gate open
Tj = 125°C
MIN.
20
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
MIN.
2.7
(dV/dt)c = 10 V/µs Tj = 125°C
1.2
Without snubber Tj = 125°C
-
SW
CW
10
35
1.3
0.2
15
35
25
50
30
60
40
400
3.5
-
2.4
-
-
3.5
BW
50
50
70
80
1000
-
-
5.3
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
I_G (1)
V_GT
V_GD
I_H (2)
I_L
V_D = 12 V R_L = 30 Ω
V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C
I_T = 500 mA
I_G = 1.2 I_GT
dV/dt (2) V_D = 67 %V_DRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125°C
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
BTA/BTB06
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
STATIC CHARACTERISTICS
Symbol
V_T (2)
V_to (2)
R_d (2)
I_DRM
I_RRM
Test Conditions
I_TM = 5.5 A tp = 380 µs
Threshold voltage
Tj = 25°C
Tj = 125°C
Dynamic resistance
V_DRM = V_RRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
60
5
1
Unit
mA
V
V
mA
mA
V/µs
A/ms
Unit
mA
V
V
mA
mA
V/µs
V/µs
Unit
V
V
mΩ
µA
mA
2