IRF830 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

IRF830
!
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 Ó´A)
Drain-Source Leakage Current
(VDS = 500V, VGS = 0 V)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Ó´A)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3)
Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 250 V, ID = 5 A,
RG = 9.1ȍ, VGS = 10 V) (Note 3)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400V, ID = 5A
VGS = 10 V) (Note 3)
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
IF = 5A, di/dt = 100A/µs , TJ = 25к
Reverse Recovery Time
Diode Forward Voltage
IS = 5A, VGS = 0 V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25ȍ
(3) Pulse.Test:.Duty Cycle Љ2% , Pulse.Width Љ300µs ЉЉ к
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CIRF830
Min
Typ
500
2.0
2.8
520
170
11
7.0
9.0
20
10
10
2
3
4.5
7.5
Max
25
100
-100
4.0
1.5
730
240
20
10
20
40
20
Units
V
Ó´A
nA
nA
V
ȍ
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Qrr
1.8
µC
ton
**
trr
415
ns
VSD
1.5
V
P
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