IRF830 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

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GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
PIN CONFIGURATION
TO-220/TO-220FP
Top View
IRF830
POWER MOSFET
FEATURES
‹ Higher Current Rating
‹ Lower rDS(ON), Lower Capacitances
‹ Lower Total Gate Charge
‹ Tighter VSD Specifications
‹ Avalanche Energy Specified
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
.................IRF830....................................................TO-220
.................IRF830FP
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed (Note 1)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derate above 25к
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
EAS
TJ, TSTG
șJC
șJA
TL
Value
5.0
18
±20
96
0.77
125
-55 to 150
1.70
62
300
Unit
A
V
W
W/к
mJ
к
к/W
к
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