TVR1B Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

RATING AND CHARACTERISTIC CURVES ( TVR1B-TVR1J)
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
Trr
+ 0.5
+
50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1Ω
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 25-35 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.5
0.4
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
10
Tj = 25 °C
8
0.3
6
0.2
4
0.1
RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100 125 150 175
AMBIENT TEMPERATURE, ( °C)
2
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 50Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
TJ = 25 °C
1.0
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.1 2.4
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
2 of 2
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