TVR1B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type

VOLTAGE RANGE: 100 - 600V
CURRENT: 0.5 A
Features
! ^{High current capability}
! _{High surge current capability}
! High reliability
! Low reverse current
! ^{Low forward voltage drop}
! Fast switching for high efficiency
Mechanical Data
! Case: D O - 4 1 Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
TVR1B - TVR1J
FAST RECOVERY RECTIFIER DIODES
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^TA ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.
Characteristic
Symbol _TVR1B
TVR1G
TVR1J
Maximum Recurrent Peak Reverse Voltage
VRRM
100
400
600
Maximum Average Forward Current
Maximum Peak One Cycle Surge Forward Current
( Non-repetitive )
Maximum Peak Forward Voltage at IF = 0.5 A
IF(AV)
IFSM
VF
0.5
10 (50 Hz)
1.2
Maximum Repetitive Reverse Current at VRRM
Maximum Reverse Recovery Time
Junction Temperature Range
IRRM
Trr(1)
Trr(2)
TJ
10
300 (Typ.)
75
- 40 to + 125
Storage Temperature Range
TSTG
- 40 to + 125
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IR = 100 mA.
( 2 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Unit
V
A
A
V
µA
ns
ns
°C
°C
1 of 2
www.sunmate.tw