RH1 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

RATING AND CHARACTERISTIC CURVES ( RH1 - RH1C )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
100 µF
specimen
0.1 IRP
20µS
200µS
Trr
NOTE : IF = IRP = 10 mA TO 1 mA
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
35
28
21
14
7
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 50Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40 60 80 10 12 140
PERCENT OF RATED
REVERSE VOLTAGE, (%)
2 of 2
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