RH1 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 400 - 1000V
CURRENT: 0.6A
Features
! High current capability
! High surge current capability
! High reliability
! Low reverse current
! Low forward voltage drop
! _{Fast switching for high efficiency}
Mechanical Data
! Case : DO-41 Molded plastic
! ^{Epoxy : UL94V-O rate flame retardant}
! ^{Lead : Axial lead solderable per MIL-STD-202,}
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! ^{Mounting position : Any}
! Weight : 0.465 gram
RH1 - RH1C
FAST RECOVERY RECTIFIER DIODES
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics T_A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current ,Ta = 50°C
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at IF = 0.6 A
Maximum Reverse Current at VR = VRM Ta = 25 °C
Maximum Reverse Current at VR = VRM Ta = 150 °C
Maximum Reverse Recovery Time (Note 1)
Junction Temperature Range
Storage Temperature Range
Symbol
VRRM
VRSM
IF(AV)
RH1 RH1A RH1B RH1C ^Unit
400
600
800 1000
V
450
650
850 1050
V
0.6
A
IFSM
VF
IR
IR(H)
Trr
TJ
TSTG
35
A
1.3
V
5.0
µA
70
µA
4.0
µs
- 40 to + 150
°C
- 40 to + 150
°C
Note :
( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA.
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