ME2303 Datasheet, PDF (2/5 Pages) SUNMATE electronic Co., LTD – Super high density cell design for extremely low RDS(ON)

P-Channel Enhancement Mode Mosfet
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μA
IGSS
Gate Leakage Current
VDS=0V, VGS=±20V
IDSS
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
RDS(ON)
Drain-Source On-Resistance ^a
VGS=-10V, ID= -1.7A
VGS=-4.5V, ID= -1.3A
VSD
Diode Forward Voltage
IS=-1.25A, VGS=0V
DYNAMIC
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-15V, VGS=-10V,
ID=-1.7A
Rg
Ciss
Coss
Crss
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS=0V, V_GS=0V, f=1MHz
VDS=-15V, VGS=0V,
f=1MHz
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
VDS=-15V, RL =15Ω
td(off)
Turn-Off Delay Time
RGEN=6Ω, VGS=-10V
tf
Turn-Off Fall time
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
Min Typ Max Unit
-30
V
-1
-3.0
V
±100 nA
-1 μA
60
75
mΩ
75 100
-0.7 -1.4
V
14.4
2.7
nC
3.6
4
Ω
464
72
pF
23
32
17
ns
40
5