ME2303 Datasheet, PDF (1/5 Pages) SUNMATE electronic Co., LTD – Super high density cell design for extremely low RDS(ON)

ME2303(-G)
GENERAL DESCRIPTION
The ME2303 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where low in-line power loss are needed in a very small outline
surface mount package.
FEATURES
● RDS(ON) ≦75mΩ@VGS=-10V
● RDS(ON) ≦100mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
PIN CONFIGURATION
(SOT-23)
Top View
e Ordering Information: ME2303 (Pb-free)
ME2303-G (Green product)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Tj=150℃)*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
Tstg
RθJA
Limit
-30
±20
-3.2
-2.6
-10
1.25
0.8
-55 to 150
-55 to 150
Typical
Maximum
100
175
e * The device mounted on 1in² FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃
℃/W
Sep, 2008-Ver2.1