BAW75 Datasheet, PDF (2/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

FIG. 1 ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
500
400
300
200
100
0
0
100
200
Ambient Temperature , Ta (°C)
FIG. 3 TYPICAL DIODE CAPACITANCE AS
A FUNCTION OF REVERSE VOLTAGE
1.2
1.0
0.9
0.8
0.7
f = 1MHz;
0.6
T_J = 25°C
0.5
0.4
0
10
20
Reverse Voltage , V_R (V)
FIG. 2 TYPICAL FORWARD VOLTAGE
1000
100
10
T_J = 25°C
1
0.1
0
0.4 0.8 1.2 1.4 1.6
Forward Voltage , V_F (V)
FIG. 4 TYPICAL REVERESE CURRENT
VERSUS JUNCTION TEMPERATURE
10⁵
10⁴
10³
10²
10
1
0
100
200
Junction Temperature , Ta (°C)
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