BAW75 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

Features
· High switching speed: max. 4 ns
· Reverse voltage:max. 25V , 50V
· Peak reverse voltage:max. 35V, 75 V
· Pb / RoHS Free
Mechanical Data
· Case: DO-35 Glass Case
· Weight: approx. 0.13g
BAW75-BAW76
150mA Axial Leaded High Speed Switching Diodes
A
B
A
C
D
DO-35
Dim
Min
Max
A
25.40
¾
B
¾
4.00
C
¾
0.60
D
¾
2.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Parameter
Symbol
Maximum Peak Reverse Voltage
BAW75
V_RM
BAW76
Maximum Reverse Voltage
BAW75
V_RM
BAW76
Maximum Average Forward Current
Half Wave Recitication with Resistive Load , f ≥ 50Hz
Maximum Power Dissipation
Maximum Surge Forward Current at t < 1µs , Tj = 25 °C
Maximum Junction Temperature
Storage Temperature Range
Parameter
Reverse Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
J
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
BAW75
BAW76
Symbol
I_R
V_F
V_(BR)R
Cd
Reverse Recovery Time
Trr
I_F(AV)
P_D
I_FSM
T_J
T_S
Test Condition
V_R = 25 V
V_R = 50 V
I_F = 30 mA
I_F = 100 mA
Test with 5µA pulses
f = 1MHz ; V_R = 0
I_F = 10 mA , I_R = 10 mA
Irr = 1mA
Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Value
25
50
35
75
150 ⁽¹⁾
500 ⁽¹⁾
2
200
-65 to + 200
Min
Typ
Max
-
-
100
-
-
100
-
-
1.0
-
-
1.0
35
-
-
75
-
-
-
-
4.0
-
-
2.0
-
-
4
Unit
V
V
mA
mW
A
°C
°C
Unit
nA
V
V
pF
ns
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