BAS86 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

500
450 VR = 50 V
400
350
300
P_R - Limit
250
at 100 % V_R
200
150
100 ^{RthJA = 540 K/W}
50
P_R - Limit
at 80 % V_R
0
25
50
75 100 125 150
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T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
10000
1000
V_R = V _RRM
100
10
1
25
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50
75 100 125 150
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
1000
100
10
1
T_j = 150 °C
T_j = 25 °C
0.1
0
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0.5
1.0
1.5
V_F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
10
9
8
7
6
5
4
3
2
1
0
0.1
15830
f = 1 MHz
1
10
100
V_R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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