BAS86 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS86
200mA Surface Mount Schottky Barrier Diode
Features
· _{For general purpose applications}
· This diode features low turn-on voltage.
The devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges.
· Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
· The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· Case:SOD-80 Glass case
· Weight: approx. 31 mg
· _{Packaging Codes/Options:}
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
C
B
A
SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ T_A = 25°C unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Forward continuous current
Repetitive peak forward current
Power dissipation¹⁾
T_amb = 25 °C
t_p < 1 s, T_amb = 25 °C, ν ≤ 0.5
T_amb = 25 °C
Parameter
Test condition
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
I_R = 10 µA (pulsed)
V_R = 40 V
Pulse test t_p < 300 µs,
I_F = 0.1 mA, δ < 2 %
Pulse test t_p < 300 µs,
I_F = 1 mA, δ < 2 %
Pulse test t_p < 300 µs,
I_F = 10 mA, δ < 2 %
Pulse test t_p < 300 µs,
I_F = 30 mA, δ < 2 %
Pulse test t_p < 300 µs,
I_F = 100 mA, δ < 2 %
V_R = 1 V, f = 1 MHz
I_F = 10 mA, I_R = 10 mA,
I_rr = 1 mA,
1) _{Valid provided that electrodes are kept at ambient temperature}
Symbol
V_R
I_F
I_FRM
P_tot
Symbol
Min
V_(BR)
50
I_R
V_F
V_F
V_F
V_F
V_F
C_tot
t_rr
Value
50
200¹⁾
500¹⁾
200¹⁾
Typ.
200
275
365
460
700
Unit
V
mA
mA
mW
Max
Unit
V
5
µA
300
mV
380
mV
450
mV
600
mV
900
mV
8
pF
5
ns
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