BAS85 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

200
180
V_R = 30 V
160
140
R_thJA = 540 kW
120
100
P_R - Limit
at 100 % V_R
80
60
P_R - Limit
at 80 % V_R
40
20
0
25
50
75
100
125
150
15822
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
10
T_j = 150 °C
T_j = 25 °C
1
0.1
0
0.5
1.0
1.5
15824
V_F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
1000
100
V_R = V_RRM
10
1
25
50
75
100
125
150
15823
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15825
V - Reverse Voltage (V)
R
Figure 4. Diode Capacitance vs. Reverse Voltage
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