BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
200mA Surface Mount Schottky Barrier Diode
Features
· For general purpose applications
· _{This diode features low turn-on voltage}
· The devices are protected by a PN junc-
tion guard ring against excessive voltage,
such as electrostatic discharges
· _{This diode is also available in a DO35 case with}
type designation BAT85
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
C
B
A
Mechanical Data
· Case:SOD-80 Glass case
· _{Weight: approx. 31 mg}
· Cathode Band Color: black
· Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ T_A = 25°C unless otherwise specified
Parameter
Test condition
Symbol
Continuous reverse voltage
V_R
Forward continuous current
T_amb = 25 °C
I_F
Peak forward current
T_amb = 25 °C
I_FM
Surge forward current
t_p < 1 s, T_amb = 25 °C
I_FSM
Power dissipation
T_amb = 65 °C
P_tot
Parameter
Test condition
Symbol
Min
Reverse breakdown voltage
I_R = 10 µA (pulsed)
V_(BR)R
30
Leakage current
V_R = 25 V
I_R
Forward voltage
Pulse test t_p < 300 µs,
V_F
I_F = 0.1 mA
Pulse test t_p < 300 µs, I_F = 1 mA
V_F
Pulse test t_p < 300 µs,
V_F
I_F = 10 mA
Pulse test t_p < 300 µs,
V_F
I_F = 30 mA
Pulse test t_p < 300 µs,
V_F
I_F = 100 mA
Diode capacitance
V_R = 1 V, f = 1 MHz
C_tot
Reverse recovery time
I_F = 10 mA, I_R = 10 mA,
t_rr
I_rr = 1 mA,
1) _{Valid provided that electrodes are kept at ambient temperature.}
Value
30
200¹⁾
300¹⁾
600¹⁾
200¹⁾
Typ.
0.2
500
Unit
V
mA
mA
mA
mW
Max
Unit
V
2
µA
240
mV
320
mV
400
mV
mV
800
mV
10
pF
5
ns
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