BAS81 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diodes

14
12
R_thJA = 540 K/W
10
V_R = 60 V
8
P_RR - Limit at 100 % V_RR
6
4
P_R - Limit at 80 % V_R
2
0
25
50
75
100
125
150
15794
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
T_j =150 °C
10
T_j = 25 °C
1
0.1
0.01
0
0.5
1
1.5
2.0
15796
V_F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
1000
100
V_R = V_RRM
10
1
0.1
25
50
75
100
125
150
15795
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
2.0
1.8
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
15797
V_R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
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