BAS81 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diodes

Features
· _{Integrated protection ring against static}
discharge
· Low capacitance
· Low leakage current
· Low forward voltage drop
· Very low switching time
· Lead (Pb)-free component
· Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
· Case:SOD-80 Glass case
· _{Weight: approx. 31 mg}
· _{Cathode Band Color: Black}
· _{Packaging Codes/Options:}
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
BAS81-BAS83
30mA Surface Mount Schottky Barrier Diode
C
B
A
SOD-80
Dim
Min
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ T_A = 25°C unless otherwise specified
Parameter
Reverse voltage
Test condition
Peak forward surge current
t_p = 1 s
Repetitive peak forward current
Forward continuous current
Parameter
Forward voltage
Reverse current
Diode capacitance
Test condition
I_F = 0.1 mA
I_F = 1 mA
I_F = 15 mA
V_R = V_Rmax
V_R = 1 V, f = 1 MHz
Part
BAS81
BAS82
BAS83
Symbol
V_F
V_F
V_F
I_R
C_D
Symbol
V_R
V_R
V_R
I_FSM
I_FRM
I_F
Min
Typ.
Value
40
50
60
500
150
30
Max
330
410
1000
200
1.6
Unit
V
V
V
mA
mA
mA
Unit
mV
mV
mV
nA
pF
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