1SR35-100 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

RATING AND CHARACTERISTIC CURVES ( 1SR35-100 ~ 1SR35-400 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
0.6
0.4
0.2
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
Ta = 25 °C
40
30
20
10
01
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.1
Ta = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
2 of 2
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