1SR35-100 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

1SR35-100 - 1SR35-400
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 100 - 400V
CURRENT: 1.0 A
Features
! High current capability
! ^{High surge current capability}
! High reliability
! Low reverse current
! Low forward voltage drop
Mechanical Data
! Case : DO-41 Molded plastic
! Epoxy : UL94V-O rate flame retardant
! Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
! Polarity : Color band denotes cathode end
! Mounting position : Any
! Weight : 0.339 gram
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol _{1SR35-100 1SR35-200}
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
100
200
VRMS
70
140
VDC
100
200
Maximum Average Forward Current
IF(AV)
1.0
0.375"(9.5mm) Lead Length Ta = 50 °C
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
IFSM
30
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current at VR = VRRM
Junction Temperature Range
Storage Temperature Range
VF
IRM
TJ
TSTG
1.1
10
- 65 to + 175
- 65 to + 175
1SR35-400 ^Unit
400
V
280
V
400
V
A
A
V
µA
°C
°C
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