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STM32F479XX Datasheet, PDF (96/217 Pages) STMicroelectronics – ARMCortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/384+4KB RAM, USB OTG HS/FS, Ethernet, FMC, dual Quad-SPI, Crypto, Graphical accelerator, Camera IF, LCD-TFT & MIPI DSI
Electrical characteristics
STM32F479xx
Table 22. Reset and power control block characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
PLS[2:0]=000 (rising edge)
PLS[2:0]=000 (falling edge)
PLS[2:0]=001 (rising edge)
2.09 2.14 2.19
1.98 2.04 2.08
2.23 2.30 2.37
VPVD
Programmable voltage
detector level selection
VPVDhyst(1)
VPOR/PDR
VPDRhyst(1)
VBOR1
PVD hysteresis
Power-on/power-down
reset threshold
PDR hysteresis
Brownout level 1 threshold
VBOR2
Brownout level 2 threshold
VBOR3
Brownout level 3 threshold
VBORhyst(1)
TRSTTEMPO(1)(2)
IRUSH(1)
BOR hysteresis
POR reset temporization
InRush current on voltage
regulator power-on (POR or
wakeup from Standby)
ERUSH(1)
InRush energy on voltage
regulator power-on (POR or
wakeup from Standby)
PLS[2:0]=001 (falling edge)
PLS[2:0]=010 (rising edge)
PLS[2:0]=010 (falling edge)
PLS[2:0]=011 (rising edge)
PLS[2:0]=011 (falling edge)
PLS[2:0]=100 (rising edge)
PLS[2:0]=100 (falling edge)
PLS[2:0]=101 (rising edge)
PLS[2:0]=101 (falling edge)
PLS[2:0]=110 (rising edge)
PLS[2:0]=110 (falling edge)
PLS[2:0]=111 (rising edge)
PLS[2:0]=111 (falling edge)
-
Falling edge
Rising edge
-
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
-
-
-
VDD = 1.7 V, TA = 105 °C,
IRUSH = 171 mA for 31 µs
2.13 2.19 2.25
2.39 2.45 2.51
2.29 2.35 2.39
2.54 2.60 2.65
2.44 2.51 2.56
V
2.70 2.76 2.82
2.59 2.66 2.71
2.86 2.93 2.99
2.65 2.84 2.92
2.96 3.03 3.10
2.85 2.93 2.99
3.07 3.14 3.21
2.95 3.03 3.09
-
100
-
mV
1.60 1.68 1.76
V
1.64 1.72 1.80
-
40
-
mV
2.13 2.19 2.24
2.23 2.29 2.33
2.44 2.50 2.56
V
2.53 2.59 2.63
2.75 2.83 2.88
2.85 2.92 2.97
-
100
-
mV
0.5 1.5 3.0 ms
-
160 200 mA
-
-
5.4 µC
1. Guaranteed by design.
2.
The reset temporization is measured from the power-on
instruction is read by the user application code.
(POR
reset
or
wakeup
from
VBAT)
to
the
instant
when
first
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