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| VN5E025MJTR-E Datasheet, PDF (9/37 Pages) STMicroelectronics – Single channel high-side driver with analog current sense for automotive applications | |||
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VN5E025AJ-E
Electrical specifications
2.3
Electrical characteristics
Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise
stated.
Table 5.
Symbol
Power section
Parameter
Test conditions
Min. Typ. Max. Unit
VCC Operating supply voltage
VUSD Undervoltage shutdown
VUSDhyst
Undervoltage shutdown
hysteresis
4.5 13 28 V
3.5 4.5 V
0.5
V
RON On state resistance
IOUT= 3A; Tj=25°C
IOUT= 3A; Tj=150°C
IOUT= 3A; VCC=5V; Tj=25°C
25 mΩ
50 mΩ
35 mΩ
Vclamp Clamp voltage
IS= 20 mA
41 46 52 V
IS Supply current
Off State; VCC=13V; Tj=25°C;
VIN=VOUT=VSENSE=VCSD=0V
On State; VCC=13V; VIN=5V;
IOUT= 0A
2(1) 5(1) µA
1.5 3 mA
IL(off1) Off state output current
VIN=VOUT=0V; VCC=13V; Tj=25°C
VIN=VOUT=0V; VCC=13V; Tj=125°C
0
0
0.01
3
5
µA
VF
Output - VCC diode
voltage
-IOUT= 2A; Tj= 150°C
0.7 V
1. PowerMOS leakage included.
Table 6. Switching characteristics (VCC=13V, Tj=25°C)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
td(off)
Turn-On delay time
Turn-Off delay time
(dVOUT/dt)on Turn-On voltage slope
RL= 4.3Ω (see Figure 6.)
RL= 4.3Ω (see Figure 6.)
RL= 4.3Ω
(dVOUT/dt)off Turn-Off voltage slope RL= 4.3Ω
WON
WOFF
Switching energy losses
during twon
RL= 4.3Ω (see Figure 6.)
Switching energy losses
during twoff
RL= 4.3Ω (see Figure 6.)
15
40
See
Figure 26
See
Figure 28
0.4
0.5
µs
µs
V/µs
V/µs
mJ
mJ
Doc ID 13106 Rev 4
9/37
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