PD55008-E Datasheet, PDF (9/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55008-E, PD55008S-E
Typical performance
PD55008
Figure 13. Output power vs. gate-source
voltage
Table 6. Output power vs. input power
12
10
8
6
4
2
0
0
500 MHz
480 MHz
520 MHz
VDD = 12.5 V
Pin= 21.7 dBm
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
10
8
6
4
2
0
0
800 MHz
850 MHz
900 MHz
Vdd = 12.5V
Idq = 250mA
0.1
0.2
0.3
0.4
0.5
0.6
Input Power (W)
Figure 14. Drain efficiecy vs. output power Figure 15. Input return loss vs. output power
60
850 MHz
50
900 MHz
40
800 MHz
30
20
Vdd = 12.5V
Idq = 250mA
10
1
2
3
4
5
6
7
8
9
Output Power (W)
0
-5
-10
-15
-20
-25
-30
0
800 MHz
900 MHz
850 MHz
1
2
3
4
5
6
Output Power (W)
Vdd = 12.5V
Idq = 250mA
7
8
9
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