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PD55008-E Datasheet, PDF (4/28 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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Electrical Characteristics
2
Electrical Characteristics
PD55008-E, PD55008S-E
2.1
TCASE = +25 oC
Static
Table 3. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0V
VGS = 20V
VDS = 10V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Test conditions
VDS = 28V
VDS = 0V
ID = 150mA
ID = 1.5A
ID = 1.5A
VDS = 12.5V
VDS = 12.5V
VDS = 12.5V
f = 1MHz
f = 1MHz
f = 1MHz
Min. Typ. Max. Unit
1
µA
1
µA
2.0
5.0 V
0.67 V
1.6
mho
58
pF
38
pF
2.8
pF
2.2
Dynamic
Table 4. Dynamic
Symbol
Test conditions
POUT VDD = 12.5V, IDQ = 150mA
f = 500MHz
GP
VDD = 12.5V, IDQ = 150mA, POUT = 8W, f = 500MHz
nD
VDD = 12.5V, IDQ = 150mA, POUT = 8W, f = 500MHz
Load VDD = 15.5V, IDQ = 150mA, POUT = 8W, f = 500MHz
mismatch All phase angles
Min. Typ. Max. Unit
8
W
15 17
dB
50 55
%
20:1
VSWR
4/28
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