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STM8AF61XX Datasheet, PDF (84/100 Pages) STMicroelectronics – Automotive 8-bit MCU, with up to 128 Kbytes Flash, EEPROM, 10-bit ADC, timers, LIN, CAN, USART, SPI, I2C, 3 V to 5.5 V
Electrical characteristics
STM8AF61xx, STM8AF51xx
Table 36. ADC accuracy with RAIN < 10 kΩ RAIN, VDDA = 3.3 V
Symbol
Parameter
Conditions
Typ
Max Unit
|ET| Total unadjusted error(1)
|EO| Offset error(1)
|EG| Gain error(1)
|ED| Differential linearity error(1)
|EL| Integral linearity error(1)
fADC = 2 MHz
1.5
TBD(1)
1.1
TBD(1)
-0.2/0.6 TBD(1)
0.9
TBD(1)
1
TBD(1)
LSB
1. TBD = To be determined
Table 37. ADC accuracy with RAIN < 10 kΩ , VDDA = 5 V
Symbol
Parameter
Conditions
Typ
Max Unit
|ET| Total unadjusted error(1)
1.4
3
|EO| Offset error(1)
0.8
2
|EG| Gain error(1)
fADC = 2 MHz
0.1
1
LSB
|ED| Differential linearity error(1)
0.9
2
|EL| Integral linearity error(1)
0.7
2
1. ADC accuracy vs. injection current: Any positive or negative injection current within the limits specified for
IINJ(PIN) and ΣIINJ(PIN) in Section 11.3.5 does not affect the ADC accuracy.
Figure 41. ADC accuracy characteristics
1023
1022
1021
7
6
5
4
3
2
1
1LSBIDEAL
=
-V----D-----D----A------–----V-----S----S-----A--
1024
(2)
ET
EG
(3)
(1)
EO
EL
ED
1 LSBIDEAL
0 1234567
VSSA
1021102210231024
VDDA
1. Example of an actual transfer curve
2. The ideal transfer curve
3. End point correlation line
ET = Total unadjusted error: Maximum deviation between the actual and the ideal transfer curves.
EO = Offset error: Deviation between the first actual transition and the first ideal one.
EG = Gain error: Deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: Maximum deviation between actual steps and the ideal one.
EL = Integral linearity error: Maximum deviation between any actual transition and the end point correlation
line.
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