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TDA7850 Datasheet, PDF (8/18 Pages) STMicroelectronics – 4 x 50 W MOSFET quad bridge power amplifier plus HSD
Electrical specifications
TDA7850
3.3
Electrical characteristics
Table 4.
Symbol
Electrical characteristics
(Refer to the test and application diagram, VS = 14.4V; RL = 4Ω; Rg = 600Ω; f = 1KHz;
Tamb = 25°C; unless otherwise specified).
Parameter
Test Condition
Min. Typ. Max. Unit
Iq1
VOS
dVOS
Gv
dGv
Quiescent current
Output offset voltage
During mute ON/OFF output
offset voltage
During St-By ON/OFF output
offset voltage
Voltage gain
Channel gain unbalance
Po Output power
Po max. Max. output power(1)
THD Distortion
eNo Output noise
SVR
fch
Ri
Supply voltage rejection
High cut-off frequency
Input impedance
CT Cross talk
ISB St-By current consumption
Ipin5
VSB out
VSB in
AM
VM out
VM in
St-by pin current
St-By out threshold voltage
St-By in threshold voltage
Mute attenuation
Mute out threshold voltage
Mute in threshold voltage
RL = ∞
Play mode / Mute mode
ITU R-ARM weighted
see Figure 20
VS = 13.2V; THD = 10%
VS = 13.2V; THD = 1%
VS = 14.4V; THD = 10%
VS = 14.4V; THD = 1%
VS = 14.4V; THD = 10%, 2Ω
VS = 14.4V; RL = 4Ω
VS = 14.4V; RL = 2Ω
Po = 4W
Po = 15W; RL = 2Ω
"A" Weighted
Bw = 20Hz to 20KHz
f = 100Hz; Vr = 1Vrms
PO = 0.5W
f = 1KHz PO = 4W
f = 10KHz PO = 4W
VSt-By = 1.5V
VSt-By = 0V
VSt-By = 1.5V to 3.5V
(Amp: ON)
(Amp: OFF)
POref = 4W
(Amp: Play)
(Amp: Mute)
100 180 280 mA
±60 mV
-10
+10 mV
-10
+10 mV
25
26
27
dB
±1
dB
23
25
16
19
W
28
30
20
23
50
55
W
50
W
85
0.006 0.05
%
0.015 0.07
35
50
μV
50
70
50
75
dB
100 300
KHz
80 100 120 KΩ
60
70
-
dB
60
-
20
μA
10
±1
μA
2.75
V
1.5
V
80
90
dB
3.5
V
1.5
V
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