IPS160H Datasheet, PDF (8/26 Pages) STMicroelectronics – Single high-side switch

Absolute maximum ratings
IPS160H
3
Absolute maximum ratings
Symbol
VCC
VOUT
IIN
VIN
VCOD
ICOD
VDIAG
IDIAG
ICC⁽¹⁾
IOUT
-IOUT⁽¹⁾
EAS⁽¹⁾
PTOT
TSTG
TJ
Table 3: Absolute maximum ratings
Parameter
Value
Supply voltage
-0.3 to 65
Output channel voltage
Input current
Vcc-Vclamp to Vcc+0.3
-10 to +10
IN voltage
VCC
Output cut-off voltage pin
5.5
Input current on cut-off pin
-1 to +10
Fault voltage
Fault current
VCC
-5 to +10
Maximum DC reverse current flowing
through the IC from GND to VCC
Output stage current
-250
Internally limited
Maximum DC reverse current flowing
through the IC from OUT to VCC
Single pulse avalanche energy
(TAMB = 125 °C, VCC = 24 V, lload = 1.15 H
load = 24 Ohm)
Power dissipation at TC = 25 °C⁽²⁾
Storage temperature range
5
800
Internally limited
-55 to 150
Junction temperature
-40 to 150
Unit
V
V
mA
V
V
mA
V
mA
mA
A
mJ
W
°C
Notes:
(1)_{Verifyed on application board with Rth(ja) = 49 °C/W}
(2)_{TJSD(MAX)-TC)/ Rth(JA)}
Absolute maximum ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. All voltages
are referenced to GND.
Symbol
Rth(JC)
Rth(JA)
Table 4: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1
49
Unit
°C/W
Package mounted on a 2-layer application board with Cu thickness = 35 μm, total
dissipation area = 1.5 cm² connected by 6 vias.
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