M58PR256LE Datasheet, PDF (78/119 Pages) STMicroelectronics – 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

DC and AC parameters
M58PR256LE, M58PR512LE, M58PR001LE
Table 30. Synchronous read AC characteristics
Symbol
Alt
Parameter
108 MHz 66 MHz Unit
t_AVKH t_AVCLKH Address Valid to Clock High
Min
5
t_ELKH t_ELCLKH Chip Enable Low to Clock High
Min
5
t_EHEL
Chip Enable Pulse width (subsequent
synchronous reads)
Min
9
t_EHTZ
Chip Enable High to Wait Hi-Z
t_KHAX t_CLKHAX Clock High to Address transition
t_KHQV
t_KHTV
Clock High to Output Valid
t_{CLKHQV Clock High to WAIT Valid}
t_KHQX
t_KHTX
Clock High to Output transition
t_{CLKHQX Clock High to WAIT transition}
t_LLKH t_ADVLCLKH Latch Enable Low to Clock High
t_LLTV
Latch Enable Low to WAIT Valid
t_KHKH
Clock period (f=66 MHz)
t_{CLK Clock period (f=108 MHz)}
Max
9
Min
5
Max
7
Min
2
Min
5
Max
14
Min
Min
9
t_KHKL
t_KLKH
t_f
t_r
Clock High to Clock Low
Clock Low to Clock High
Clock fall or rise time
Min
2.5
Min
0.3
Max
2
5
ns
5
ns
11
ns
11
ns
5
ns
11
ns
3
ns
5
ns
14
ns
15
ns
ns
3.5 ns
-
ns
3
ns
1. Sampled only, not 100% tested.
2. For other timings please refer to Table 29: Asynchronous read AC characteristics.
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