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M58PR256LE Datasheet, PDF (1/119 Pages) STMicroelectronics – 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories | |||
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M58PR256LE
M58PR512LE M58PR001LE
256-Mbit, 512-Mbit or 1-Gbit (Ã 16, multiple bank, multilevel, burst)
1.8 V supply Flash memories
Features
â Supply voltage
â VDD = 1.7 V to 2.0 V for program, erase
and read
â VDDQ = 1.7 V to 2.0 V for I/O buffers
â VPP = 9 V for fast program
â Synchronous/asynchronous read
â Synchronous burst read mode:
108 MHz, 66 MHz
â Asynchronous page read mode
â Random access: 96 ns
â Programming time
â 4.2 µs typical word program time using
Buffer Enhanced Factory Program
command
â Memory organization
â Multiple bank memory array:
32 Mbit banks (256 Mb devices)
64 Mbit banks (512 Mb devices)
128 Mbit banks (1 Gb devices)
â Four EFA (extended flash array) blocks of
64 Kbits
â Dual operations
â Program/erase in one bank while read in
others
â No delay between read and write
operations
Wafer
â Security
â 64 bit unique device number
â 2112 bit user programmable OTP cells
â CFI (common Flash interface)
â 100 000 program/erase cycles per block
â Electronic signature
â Manufacturer code: 20h
â 256 Mbit device: 8818
â 512 Mbit device: 8819
â 1 Gbit device: 880F
â Block locking
â All blocks locked at power-up
â Any combination of blocks can be locked
with zero latency
â WP for block lock-down
â Absolute Write protection with VPP = VSS
The M58PRxxxLE memories are only available as part of a multichip package device.
September 2007
Rev 2
1/119
www.st.com
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