STM8S103F3U6TR Datasheet, PDF (71/117 Pages) STMicroelectronics – Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash

STM8S103K3 STM8S103F3 STM8S103F2
Electrical characteristics
Symbol Parameter
Conditions
Data retention (data
memory) after 300k
erase/write cycles at
T_A = +125 °C
T_RET = 85°C
I_DD
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
Min^{(1) Typ Max Unit}
1
-
-
-
2
-
mA
(1) _{Data based on characterization results, not tested in production.}
(2) _{The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes}
even when a write/erase operation addresses a single byte.
10.3.6 I/O port pin characteristics
Symbol
V_IL
V_IH
General characteristics
Subject to general operating conditions for V_DD and T_A unless otherwise specified. All unused
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Table 38: I/O static characteristics
Parameter
Conditions
Min Typ
Input low level voltage
V_DD = 5 V
-0.3
-
Input high level voltage
0.7 x
V_DD
-
Max
0.3 x
V_DD
V_DD +
0.3
Unit
V
V_hys
Hysteresis⁽¹⁾
-
700
-
mV
R_pu
Pull-up resistor
V_DD = 5 V, V_IN = V_SS
30
55
80
kΩ
t_R, t_F
Rise and fall time
(10 % - 90 %)
Fast I/Os
-
Load = 50 pF
Standard and high sink
I/Os
-
Load = 50 pF
Fast I/Os
-
-
35 ⁽³⁾
-
125 ⁽³⁾
ns
-
20⁽³⁾
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