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VND810SP-E Datasheet, PDF (7/28 Pages) STMicroelectronics – Double channel high-side driver
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VND810SP-E
Electrical specifications
Table 3. Absolute maximum ratings (continued)
Symbol
Parameter
Value
Unit
EMAX
Ptot
Tj
Tc
Tstg
Maximum switching energy
(L = 1.4 mH; RL = 0 Ω; Vbat = 13.5 V;
Tjstart = 150 °C; IL = 5 A)
Power dissipation TC = 25 °C
Junction operating temperature
Case operating temperature
Storage temperature
24
mJ
52
W
Internally Limited
°C
-40 to 150
°C
-55 to 150
°C
2.2
Thermal data
Table 4. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case
2.4
°C/W
Rthj-amb Thermal resistance junction-ambient
52.4 (1)
37 (2) °C/W
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 μm thick). Horizontal
mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm2 of Cu (at least 35 μm thick). Horizontal
mounting and no artificial air flow
2.3
Electrical characteristics
Values specified in this section are for 8 V < VCC < 36 V; -40 °C < Tj < 150 °C, unless
otherwise stated.
(Per each channel)
)
Table 5. Power output
Symbol
Parameter
Test conditions
Min.
VCC(1)
Operating supply
voltage
5.5
VUSD(1) Undervoltage shutdown
3
VOV(1) Overvoltage shutdown
36
RON On-state resistance
IOUT = 1 A; Tj = 25 °C
IOUT = 1 A; VCC > 8 V
IS(1) Supply current
Off-state; VCC = 13 V;
VIN = VOUT = 0 V
Off-state; VCC = 13 V;
VIN = VOUT = 0 V; Tj = 25 °C
On-state; VCC = 13 V; VIN = 5 V;
IOUT = 0 A
IL(off1) Off-state output current VIN = VOUT = 0 V
0
Typ.
13
4
12
12
5
Max. Unit
36 V
5.5 V
V
160 mΩ
320 mΩ
40 μA
25 μA
7 mA
50 μA
Doc ID 10880 Rev 3
7/28
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