STW36N55M5 Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

STP36N55M5, STW36N55M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
12
10
8
6
4
2
0
0
VDS VDD=440V
ID=16.5A
10 20 30 40 50
AM14932v1
VDS(V)
450
400
350
300
250
200
150
100
50
0
60 70 Qg(nC)
RDS(on)
(Ω)
0.065
0.06
VGS=10V
AM14933v1
0.055
0.05
0.045
0
5 10 15 20 25 30 ID(A)
Figure 10. Capacitance variations
C
(pF)
10000
1000
100
10
Figure 11. Output capacitance stored energy
AM14934v1
Eoss
(µJ)
AM14935v1
10
Ciss
8
6
Coss
4
Crss
2
1
0.1
1
10
100 VDS(V)
0
0 100 200 300 400 500 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
ID=250µA
AM05459v3
RDS(on)
(norm)
2.1
1.9
VGS=10V
ID=16.5V
AM05460v3
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Doc ID 022902 Rev 2
7/15