STW36N55M5 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

STP36N55M5
STW36N55M5
N-channel 550 V, 0.06 Ω typ., 33 A MDmesh™ V Power MOSFET
in TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STP36N55M5
STW36N55M5
V_DSS @ R_DS(on)
T_Jmax
max
I_D
600 V < 0.08 Ω 33 A
■ Worldwide best R_DS(on) * area
■ Higher V_DSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
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3
!-V
Table 1. Device summary
Order codes
STP36N55M5
STW36N55M5
Marking
36N55M5
Package
TO-220
TO-247
October 2012
This is information on a product in full production.
Doc ID 022902 Rev 2
Packaging
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