STP77N6F6 Datasheet, PDF (7/13 Pages) STMicroelectronics – N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package

STP77N6F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs.
temperature
C
AM15849v1
VGS(th)
AM15850v1
(pF)
(norm)
1.2
Ciss
ID=250µA
1
0.8
1000
0.6
0.4
Coss
Crss
100
0.1
1
10
VDS(V)
0.2
0
-50 -25 0 25 50 75 100 125 TJ(°C)
Figure 10. Normalized on-resistance vs.
temperature
RDS(on)
(norm)
2
VGS=10V
ID=38.5 A
AM15851v1
1.5
1
0.5
Figure 11. Drain-source diode forward
characteristics
VSD
AM15852v1
(V)
1
TJ=-50°C
0.9
TJ=25°C
0.8
0.7
TJ=150°C
0.6
0
-50 -25 0 25 75 100 125 150 TJ(°C)
Figure 12. Normalized V_DS vs. temperature
VDS
(norm)
AM15853v1
1.1
ID=250µA
0.5
0 10 20 30 40 50 60
ISD(A)
1.05
1
0.95
0.9
-50 -25 0 25 50 75 100 125 TJ(°C)
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