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| STP77N6F6 Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 60 V, 0.0063 typ., 77 A STripFET VI DeepGATE Power MOSFET in a TO-220 package | |||
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STP77N6F6
N-channel 60 V, 0.0063 Ω typ., 77 A STripFET⢠VI DeepGATEâ¢
Power MOSFET in a TO-220 package
Datasheet â production data
TAB
3
2
1
TO-220
Features
Order code VDS RDS(on) max
STP77N6F6 60 V 0.007 Ω
ID
77 A
PTOT
80 W
⢠RDS(on) * Qg industry benchmark
⢠Extremely low on-resistance RDS(on)
⢠High avalanche ruggedness
⢠Low gate drive power losses
⢠Very low switching gate charge
Figure 1. Internal schematic diagram
Applications
⢠Switching applications
' 7$%
*
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFETâ¢
DeepGATE⢠technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
6
$0Y
Order code
STP77N6F6
Table 1. Device summary
Marking
Package
77N6F6
TO-220
Packaging
Tube
May 2013
This is information on a product in full production.
DocID024067 Rev 2
1/13
www.st.com
13
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