STL30N10F7 Datasheet, PDF (7/15 Pages) STMicroelectronics – Ultra low on-resistance

STL30N10F7
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
(pF)
1000
800
GIPD0110131015LM
Ciss
VGS(th)
(norm)
1.1
1
0.9
GIPD0110131125LM
ID=250µA
600
0.8
400
200
Coss
0
Crss
0 10 20 30 40 50 60 70 80 90 VDS(V)
0.7
0.6
0.5
0.4
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
Figure 10. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
ID=4 A
VGS=10 V
GIPD011013945LM
1.5
1
0.5
Figure 11. Source-drain diode forward
characteristics
VSD (V)
GIPD0110131224LM
1
TJ=-55°C
TJ=25°C
0.9
0.8
0.7
TJ=150°C
0.6
0
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
Figure 12. Normalized V_(BR)DSS vs temperature
V(BR)DSS
(norm)
1.04
ID=1mA
GIPD0110131250LM
0.5
2 4 6 8 10 12 14 ISD(A)
1.02
1
0.98
0.96
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
DocID025424 Rev 1
7/15