STL30N10F7 Datasheet, PDF (1/15 Pages) STMicroelectronics – Ultra low on-resistance

STL30N10F7
N-channel 100 V, 0.027 Ω typ., 8 A, STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
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Order code V_DS R_DS(on) max. I_D P_TOT
STL30N10F7 100 V 0.035 Ω 8 A 4.8 W⁽¹⁾
1. The value is rated according to R_thj-pcb.
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 7^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest R_DS(on) in all packages.
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Order code
STL30N10F7
$0Y
Table 1. Device summary
Marking
Package
30N10F7
PowerFLAT™ 5x6
Packaging
Tape and reel
October 2013
This is information on a product in full production.
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