STF26NM60N-H Datasheet, PDF (7/12 Pages) STMicroelectronics – Low gate input resistance

STF26NM60N-H
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
12
VDS
10
VDD=480V
ID=20A
AM03320v1
VGS
C
(pF)
10000
8
1000
AM03319v1
Ciss
6
4
2
0
0 10 20 30 40 50 60 Qg(nC)
100
10
1
0.1
1
Coss
Crss
10
100 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.1
AM03321v1
RDS(on)
(norm)
2.1
AM03322v1
1.0
1.7
0.9
1.3
0.8
0.9
0.7
-50 -25 0 25 50 75 100 TJ(°C)
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B_VDSS vs temperature
VSD
(V)
TJ=-50°C
1.2
AM03324v1
BVDSS
(norm)
1.07
AM03323v1
1.0
TJ=25°C
1.05
1.03
0.8
TJ=150°C
1.01
0.6
0.99
0.4
0.97
0.2
0.95
0
0 10 20 30 40 50 ISD(A)
0.93
-50 -25 0 25 50 75 100 TJ(°C)
Doc ID 16964 Rev 1
7/12