STF26NM60N-H Datasheet, PDF (1/12 Pages) STMicroelectronics – Low gate input resistance

STF26NM60N-H
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET
in TO-220FP
Features
Type
STF26NM60N-H
V_DSS
600 V
R_DS(on)
max
< 0.165 Ω
I_D
20 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
3#
Table 1. Device summary
Order codes
Marking
Package
Packaging
STF26NM60N-H⁽¹⁾
26NM60N
TO-220FP
Tube
1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as
“halogen-free” . See Section 4: Package mechanical data.
January 2010
Doc ID 16964 Rev 1
1/12
www.st.com
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