STF25N60M2-EP Datasheet, PDF (7/14 Pages) STMicroelectronics – Very low turn-off switching losses

STF25N60M2-EP
Figure 8: Capacitance variations
C
GIPG181120141549ALS
(pF)
1000
C_ISS
100
10
1
0.1
1
C_OSS
C_RSS
10
100
V_DS(V)
Electrical characteristics
Figure 9: Output capacitance stored energy
E_OSS
(μJ)
GIPG181120141603ALS
8
6
4
2
0
0 100 200 300 400 500 600 V_DS(V)
Figure 10: Turn-off switching loss vs drain
current
E_OSS
(μJ)
GIPG261120141106ALS
12
10
8
6
4
012
34
5 6 I_D(A)
Figure 11: Normalized gate threshold voltage vs
temperature
V_GS(th)
(norm)
GIPG181120141615ALS
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
0.6
-75
-25 25 75
125 T_J(°C)
Figure 12: Normalized on-resistance vs
temperature
R_DS(on)
(norm)
GIPG181120141628ALS
2.2
1.8
V_GS = 10 V
1.4
1.0
0.6
0.2
-75 -25
25
75
125 T_J(°C)
Figure 13: Source-drain diode forward
characteristics
V_SD
(V)
GIPG191120141427ALS
1.1
T_J=-50°C
1.0
0.9
T_J=-50°C
0.8
0.7
T_J=-50°C
0.6
0
0
4
8
12
16 I_SD(A)
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