STF25N60M2-EP Datasheet, PDF (1/14 Pages) STMicroelectronics – Very low turn-off switching losses

STF25N60M2-EP
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP
Power MOSFET in a TO-220FP package
Datasheet - production data
3
2
1
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code
STF25N60M2-EP
VDS @
TJmax
650 V
RDS(on)
max.
0.188 Ω
ID
18 A
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for Very High Frequency
Converters (f > 150 kHz)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Order code
STF25N60M2-EP
Table 1: Device summary
Marking
Package
25N60M2EP
TO-220FP
Packaging
Tube
January 2015
DocID027251 Rev 2
This is information on a product in full production.
1/14
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