STD15P6F6AG Datasheet, PDF (7/15 Pages) STMicroelectronics – Very low on-resistance

STD15P6F6AG
Figure 8: Capacitance variations
C
(pF)
400
Ciss
300
200
100
0
0
10 20 30 40
Coss
Crss
50 VDS(V)
Electrical characteristics
Figure 9: Normalized V(BR)DSS vs
temperature
Figure 10: Normalized gate threshold voltage
vs temperature
Figure 11: Normalized on-resistance vs.
temperature
Figure 12: Source-drain diode forward characteristics
For the P-channel Power MOSFET, current and voltage polarities are reversed.
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