STD15P6F6AG Datasheet, PDF (5/15 Pages) STMicroelectronics – Very low on-resistance

STD15P6F6AG
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD ⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 7: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
-
-10
A
-
-40
A
VGS = 0 V, ISD = -5 A
ISD = -10 A, di/dt = 100 A/µs, VDD = -48 V,
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
-
-1.1 V
- 20
ns
- 17.8
nC
- -1.8
A
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{Pulse test: pulse duration = 300 µs, duty cycle 1.5%}
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