STD11N60M2-EP Datasheet, PDF (7/16 Pages) STMicroelectronics – N-channel 600 V, 0.550 (ohm) typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

STD11N60M2-EP
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Turn-off switching energy vs drain
current
Figure 10: Normalized gate threshold voltage
vs temperature
V_GS(th)
(norm)
GIPG181120141615ALS
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
0.6
-75
-25 25 75
125 T_J(°C)
Figure 11: Normalized on-resistance vs
temperature
R_DS(on)
(norm)
GIPG181120141628ALS
2.2
1.8
V_GS = 10 V
1.4
1.0
0.6
0.2
-75 -25 25
75
125 T_J(°C)
Figure 12: Normalized V(BR)DSS vs temperature
V_(BR)DSS
(norm)
GIPG191120141457ALS
Figure 13: Output capacitance stored energy
1.08
1.04
1.00
0.96
I_D = 1mA
0.92
0.88
-75 -25
25
75
125 T_J(°C)
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