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| STD11N60M2-EP Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 600 V, 0.550 (ohm) typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package | |||
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STD11N60M2-EP
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh⢠M2 EP
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD11N60M2-EP
VDS
600 V
RDS(on) max.
0.595 Ω
ID
7.5 A
Figure 1: Internal schematic diagram
D(2, TAB)
ï· Extremely low gate charge
ï· Excellent output capacitance (COSS) profile
ï· Very low turn-off switching losses
ï· 100% avalanche tested
ï· Zener-protected
Applications
ï· Switching applications
G(1)
S(3)
Order code
STD11N60M2-EP
Description
This device is an N-channel Power MOSFET
developed using MDmesh⢠M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
AM01476v1_tab
Table 1: Device summary
Marking
Package
11N60M2EP
DPAK
Packaging
Tape and reel
April 2016
DocID027667 Rev 1
This is information on a product in full production.
1/16
www.st.com
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