STB57N65M5 Datasheet, PDF (7/22 Pages) STMicroelectronics – N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
VGS
(V)
10 _VDS
8
6
VDD=520V
ID=21A
AM14708v1
VDS
(V)
500
400
300
RDS(on)
(Ω)
0.062
0.060
0.058
0.056
VGS=10V
AM14709v1
4
200
0.054
2
100
0.052
0
0
0
20 40 60 80 100 Qg(nC)
0.05
0
10
20
30
ID(A)
Figure 10. Capacitance variations
C
(pF)
10000
1000
100
10
1
0.1
1
10
100
Figure 11. Output capacitance stored energy
AM14710v1
Ciss
Eoss
(µJ)
18
16
14
AM14711v1
12
10
Coss
8
6
Crss
VDS(V)
4
2
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
1.00
AM05459v1
ID = 250 µA
RDS(on)
(norm)
2.1
1.9
1.7
VG_S= 10V
ID= 21 A
AM05460v1
1.5
0.90
1.3
1.1
0.80
0.9
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
Doc ID 022849 Rev 4
7/22