STB57N65M5 Datasheet, PDF (1/22 Pages) STMicroelectronics – N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

STB57N65M5, STF57N65M5, STI57N65M5,
STP57N65M5
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET
in I²PAK, TO-220, TO-220FP and D²PAK packages
Datasheet — production data
Features
Order codes
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
V_DSS @
T_Jmax
R_DS(on)
max
710 V < 0.063 Ω
I_D
42 A
■ Worldwide best R_DS(on)*area amongst the
silicon based devices
■ Higher V_DSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100% avalanche tested
Applications
■ Switching applications
TAB
3
1
D²PAK
TAB
3
2
1
TO-220FP
TAB
12³
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
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Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes
STB57N65M5
STF57N65M5
STI57N65M5
STP57N65M5
Marking
57N65M5
Packages
D²PAK
TO-220FP
I²PAK
TO-220
Packaging
Tape and reel
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December 2012
This is information on a product in full production.
Doc ID 022849 Rev 4
1/22
www.st.com
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